Samsung Electronics Co. today announced that it has begun shipping samples of what it calls highest density memory module -- 32GB DRAM -- for servers to equipment manufacturers.
The module doubles the 16GB capacity of Samsung's previous high-end module, which used 2Gbit chips based on 50 nanometer (nm) lithography technology.
The new module is based on 4Gbit DDR3 chips using Samsung's latest 40nm lithography technology. Samsung had started using the 40nm process to produce memory products last July.
"Our highly successful implementation of 40nm-class technology is indicative of our determination to move toward the 30nm-class process node in the second half of this year," said Soo-In Cho, general manager of Samsung Electronics Memory Division, in a statement. "Our 30nm-class technology will provide even more advanced memory solutions for high-end server and PC applications."
Samsung said the new dual inline memory module (RDIMM) consists of 36 DDR3 chips that can perform at equal or greater levels as a 40nm-based 16GB module with no increase in power consumption.
A dual CPU server can house up to 12 32GB DRAM modules, which would provide some 384GB of memory, doubling the company's previous capacity of 192GBs per server. The new offering boosts power consumption by less than 5% over that needed for 16GB module-based systems, Samsung said.
With just six 32GB RDIMMs, a dual CPU server would offer 192GB of storage capacity, while increasing DRAM operating speed in a two-way server system by some 33% percent from 800Mbits/sec to 1,066Mbits/sec.
Power consumption would be cut by 40%, Samsung said.
Mass production of the 32GB RDIMM is slated to begin next month.
Lucas Mearian covers storage, disaster recovery and business continuity, financial services infrastructure and health care IT for Computerworld. Follow Lucas on Twitter at @lucasmearian, or subscribe to Lucas's RSS feed . His e-mail address is firstname.lastname@example.org.